集成电路科学与工程学院（示范性微电子学院）
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| 导师代码： |
20350
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| 导师姓名： |
李轩
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| 性 别： |
男 |
| 特 称： |
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| 职 称： |
研究员
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| 学 位： |
工学博士学位
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| 属 性： |
专职 |
| 电子邮件： |
xuanli@uestc.edu.cn
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| 学术经历：
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博士毕业于电子科技大学微电子学与固体电子学专业，期间美国北卡罗莱纳州立大学NCSU未来可再生能源分布与管理系统FREEDM中心联合培养2年、美国德州大学奥斯汀分校UT Austin半导体功率电子SPEC中心交流学习（师从美国工程院院士、ETO发明人、IGBT核心发明人）；本科毕业于电子科技大学电子科学与技术（微电子技术）专业。
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| 个人简介：
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李轩，国家级青年人才计划获得者、“百人计划”获得者、博士生导师、四川省学术和技术带头人后备人选，长期从事面向碳化硅功率半导体器件(电力电子器件)的芯片级设计与可靠性、封装设计与可靠性、驱动电路与电力变换拓扑的研究。
成果形成了具有里程碑性质的零开关损耗系列成果，拓展高压碳化硅功率芯片频率边界至兆赫兹量级，协同推动性能（高压大功率、高温高频）与可靠性（瞬态与长期）发展，成果入选宽禁带半导体国际技术蓝图（International Technology Roadmap for Wide-Bandgap Power Semiconductors, ITRW）。
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| 科研项目：
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作为负责人主持国家自然科学基金重点、面上、青年、四川省重点研发计划、其他省级重大及自然科学基金面上、电子学会、行业龙头企业、央企等项目；作为主研人员参与国家自然科学基金重点（多项）和面上项目（多项）、国家重点研发计划课题（多项）、国家科技重大专项（02）、四川省重点（国际合作类、医工交叉类）项目、重点实验室项目（多项）、行业龙头企业项目（多项）等20余项。
面向碳化硅功率半导体领域的国家战略需求与国民经济主战场，以碳化硅功率芯片为核心，研究覆盖从器件物理与研制、可靠性测评与加固、驱动与封装、系统应用等多个环节。新一代碳化硅功率芯片凭借其耐高压、耐高温、高频、低损耗等优势，正成为电动汽车、AI数据中心供电、光储充一体化、低空飞行器等中低压场景，高速列车与城市轨道交通等中高压场景；电网发-送-配等高压场景的核心器件。我们围绕具体的应用场景，开展了三个方面研究：
①从材料与界面等器件物理底层出发，研究芯片的设计、制备、建模与可靠性评估，并开展与之相适配的封装集成、驱动电路、控制策略与监测保护，进而构建高功率密度、高效率、高可靠的能源装置；
②基于通用与定制化器件，面向逆变（电驱、光伏）、整流（充电、输电）电荷泵、高频功率放大（E类、F类）等典型电路拓扑，对芯片及其封装、驱动、控制进行定制化设计；
③将AI数据驱动与物理机制相结合，优化器件与的设计（器件结构、系统拓扑、控制策略）与可靠性（寿命预测、状态监测与健康管理）。
最终，以应用场景特点为牵引，突破工业级、车规级、航天级芯片及系统应用背后的关键科学问题与核心工程技术，构建新一代碳化硅功率电子系统。
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| 研究成果：
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近几年来，在电子器件领域的顶级期刊IEEE Electron Device Letter、IEEE Trans. on Electron Device和电力电子领域的顶级期刊IEEE Trans. on Industrial Electronics、IEEE Trans. on Power Electronics等发表期刊论文，业界旗舰/知名会议IEEE ISPSD、ICSCRM、IEEE APEC、IEEE WiPDA、IEEE ECCE等发表会议论文，共计百余（100+）篇；申请发明专利40余项。
近几年部分代表作：
近几年部分代表作：
[1] Xu Li, Xiaochuan Deng, Zhengxiang Liao, Xuan Li, Renxu Jia, and Bo Zhang, "Failure Mechanism of 1200-V SiC MOSFET With Embedded Schottky Barrier Diode Under Short-Circuit Condition," in IEEE Transactions on Electron Devices, vol. 72, no. 3, pp. 1259-1263, Feb. 2025.
[2] Jiahao Hu, Xiaochuan Deng, Tao Xu, Haibo Wu, Xing Zeng, Xu Li, Song Bai, Xuan Li, and Bo Zhang, "Investigation on Gate Oxide Degradation of SiC MOSFETs Induced by Dynamic Gate Stress under Total Ionizing Dose Irradiation," in IEEE Electron Device Letters, vol. 46, no. 10, pp. 1733-1736, Oct. 2025.
[3] Zhao Qi, Junke Li, Hongquan Chen, Xuan Li, Xin Zhou, Ming Qiao, Wenqi Wu, Xin Zhang, Sen Zhang, Nailong He, Zhili Zhang, Zhaoji Li, and Bo Zhang, "Novel High-Holding-Voltage Shunt-Triggered SCR for Robust ESD Protection," in IEEE Electron Device Letters, vol. 46, no. 10, pp. 1673-1676, Oct. 2025.
[4] Xuan Li, Yifan Wu, Zhao Qi, Zhen Fu, Yanning Chen, Wenmin Zhang, Quan Zhang, Hanqing Zhao, Xiaochuan Deng, and Bo Zhang, "An In-Depth Investigation into Short-Circuit Failure Mechanisms of State-of-the-Art 1200 V Double Trench SiC MOSFETs," in IEEE Transactions on Power Electronics, vol. 39, no. 12, pp. 15576-15583, Dec. 2024.
[5] Xu Li, Xiaochuan Deng, Jingyu Huang, Xuan Li, Wanjun Chen, and Bo Zhang, "Accurate Evaluation of Threshold Voltage Hysteresis in SiC MOSFET Under Switching Stress," in IEEE Transactions on Power Electronics, vol. 39, no. 11, pp. 14118-14121, Nov. 2024.
[6] Hanqing Zhao, Xuan Li, Yifan Wu, Rui Yang, Qian Lou, Lingfeng Li, Xiaochuan Deng, and Bo Zhang, "Investigation of Inrush Current Induced Trench Gate Degradation inside SiC MOSFET by New FowlerNordheim Localization Methodology," in IEEE Transactions on Power Electronics, vol. 39, no. 5, pp. 4947-4951, May 2024.
[7] Rui Yang, Xiaochuan Deng, Xu Li, Haibo Wu, Xuan Li, Song Bai, Yi Wen, and Bo Zhang, "An Improved Single-Event Effect Performance SiC MOSFET of Hole Extraction Pillar Combined With Multilayer P-Shield Structure," in IEEE Transactions on Electron Devices, vol. 71, no. 2, pp. 1018-1023, Feb. 2024.
[8] Ruizhe Sun, Xiaochuan Deng, Xu Li, Xuan Li, Hao Wu, Yi Wen, Wanjun Chen, and Bo Zhang, "An Adjustable P-Region Potential SiC Trench MOSFET With Improved High-Frequency and Short-Circuit Performance," in IEEE Transactions on Electron Devices, vol. 70, no. 12, pp. 6492-6497, Dec. 2023.
[9] Ruizhe Sun, Xiaochuan Deng, Xu Li, Xuan Li, Hao Wu, Yi Wen, Wanjun Chen, and Bo Zhang, "A Novel SiC Trench MOSFET Embedding Auto-Adjust Source-Potential Region with Switching Oscillation Suppression," in IEEE Electron Device Letters, vol. 44, no. 11, pp. 1817-1820, Nov. 2023.
[10] Xuan Li, Lingfeng Li, Kunze Xie, Zhengyu Yang, Wenguang Wu, Xiaochuan Deng, and Bo Zhang, "Charge Imbalance Tolerance of 4H-SiC Superjunction Devices Featuring Breakdown Path Variation," in IEEE Electron Device Letters, vol. 44, no. 7, pp. 1044-1047, July 2023.
[11] Changwang Wang, Xuan Li, Lingfeng Li, Xiaochuan Deng, Wentong Zhang, Liu Zheng, Yansheng Zou, Weining Qian, Zhaoji Li, and Bo Zhang, "Performance Limit and Design Guideline of 4H-SiC Superjunction Devices Considering Anisotropy of Impact Ionization," in IEEE Electron Device Letters, vol. 43, no. 12, pp. 2025-2028, Dec. 2022.
[12] Jiawei Ding, Xiaochuan Deng, Songjun Li, Hao Wu, Xu Li, Xuan Li, Wanjun Chen, and Bo Zhang, "A Low-Loss Diode Integrated SiC Trench MOSFET for Improving Switching Performance," in IEEE Transactions on Electron Devices, vol. 69, no. 11, pp. 6249-6254, Nov. 2022.
[13] Xiaochuan Deng, Zhijie Cheng, Zhiyu Chen, Hao Wu, Song Bai, Xu Li, Xuan Li, Wanjun Chen, and Bo Zhang, "A Hybrid-Channel Injection Enhanced Modulation 4H-SiC IGBT Transistors With Improved Performance," in IEEE Transactions on Electron Devices, vol. 69, no. 8, pp. 4421-4426, Aug. 2022.
[14] Xiaochuan Deng, Wei Huang, Xu Li, Xuan Li, Chao Chen, Yi Wen, Jiawei Ding, Wanjun Chen, Yongkui Sun, and Bo Zhang, "Investigation of Failure Mechanisms of 1200 V Rated Trench SiC MOSFETs Under Repetitive Avalanche Stress," in IEEE Transactions on Power Electronics, vol. 37, no. 9, pp. 10562-10571, Sept. 2022.
[15] Junjie Ye, Xuan Li, Yangyang Wu, Xiaochuan Deng, Zhiqiang Li, and Bo Zhang, "Failure Analysis of 200V p-GaN HEMT under Unclamped Inductive Switching Conditions," 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), pp. 350-353, Aug. 2021.
[16] Xu Li, Xiaochuan Deng, Xuan Li, Xiaojie Xu, Yi Wen, Hao Wu, Wanjun Chen, and Bo Zhang, "A Novel SiC MOSFET With Embedded Auto-Adjust JFET With Improved Short Circuit Performance," in IEEE Electron Device Letters, vol. 42, no. 12, pp. 1751-1754, Dec. 2021.
[17] Ximing Chen, Xuan Li, Bangbing Shi, Junmiao Xiang, Yuanzhuo Dai, Chenzhan Li, Xiaochuan Deng, Haihui Luo, Yudong Wu, and Bo Zhang, "Deep Understanding of Negative Gate Voltage Restriction for SiC MOSFET Under Wide Temperature Range," in IEEE Transactions on Power Electronics, vol. 36, no. 8, pp. 8622-8627, Aug. 2021.
[18] Ximing Chen, Bangbing Shi, Xuan Li, Huaiyun Fan, Chenzhan Li, Xiaochuan Deng, Haihui Luo, Yudong Wu, and Bo Zhang, "Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs," in Chin. Phys. B, vol. 30, no. 4, pp. 048504, Apr. 2020.
[19] Xiaochuan Deng, Xu Li, Xuan Li, Hao Zhu, Xiaojie Xu, Yi Wen, Yongkui Sun, Wanjun Chen, Zhiqiang Li, and Bo Zhang, "Short-Circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs," in IEEE Transactions on Power Electronics, vol. 36, no. 7, pp. 8300-8307, July 2021.
[20] Xiaochuan Deng, Xiaojie Xu, Xuan Li, Xu Li, Yi Wen, and Wanjun Chen, "A Novel SiC MOSFET Embedding Low Barrier Diode With Enhanced Third Quadrant and Switching Performance," in IEEE Electron Device Letters, vol. 41, no. 10, pp. 1472-1475, Oct. 2020.
[21] Ximing Chen, Xuan Li, Yafei Wang, Hong Chen, Caineng Zhou, Chao Zhang, Chengzhan Li, Xiaochuan Deng, Yudong Wu, and Bo Zhang, "Different JFET Designs on Conduction and Short-Circuit Capability for 3.3 kV Planar-Gate Silicon Carbide MOSFETs," in IEEE Journal of the Electron Devices Society, vol. 8, pp. 841-845, July 2020.
[22] Xuan Li, Xing Tong, Rui Hu, Yi Wen, Hao Zhu, Xiaochuan Deng, Yongkui Sun, Wanjun Chen, Song Bai, and Bo Zhang, "Failure Mechanism of Avalanche Condition for 1200V Double Trench SiC MOSFET," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 9, no. 2, pp. 2147-2154, Apr. 2021.
[23] Xiaochuan Deng, Hao Zhu, Xuan Li, Xing Tong, Shufeng Gao, Yi Wen, Song Bai, Wanjun Chen, Kun Zhou, and Bo Zhang, "Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions," in IEEE Transactions on Power Electronics, vol. 35, no. 8, pp. 8524-8531, Aug. 2020.
[24] Xuan Li, Xu Li, Pengkun Liu, Suxuan Guo, Liqi Zhang, Alex Q. Huang, Xiaochuan Deng, and Bo Zhang, "Achieving Zero Switching Loss in Silicon Carbide MOSFET," in IEEE Transactions on Power Electronics, vol. 34, no. 12, pp. 12193-12199, Dec. 2019.
[25] Xuan Li, Ben Tan, Alex Q. Huang, Bo Zhang, Yumeng Zhang, Xiaochuan Deng, Zhaoji Li, Xu She, Fangzhou Wang, and Xing Huang, "Impact of Termination Region on Switching Loss for SiC MOSFET," in IEEE Transactions on Electron Devices, vol. 66, no. 2, pp. 1026-1031, Feb. 2019.
[26] Xuan Li, Xing Tong, Alex Q. Huang, Hong Tao, Kun Zhou, Yifan Jiang, Junning Jiang, Xiaochuan Deng, Xu She, Bo Zhang, Yourun Zhang, and Qi Tian, "SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode," in IEEE Transactions on Electron Devices, vol. 65, no. 1, pp. 347-351, Jan. 2018.
[27] Xuan Li, Junning Jiang, Alex Q. Huang, Suxuan Guo, Xiaochuan Deng, Bo Zhang, and Xu She, "A SiC Power MOSFET Loss Model Suitable for High-Frequency Applications," in IEEE Transactions on Industrial Electronics, vol. 64, no. 10, pp. 8268-8276, Oct. 2017.
[28] Hao Li, Bin Tang, Xuan Li, Zhenjun Qing, Yingxiang Li, Han Yang, Qiang Wang, and Shuren Zhang, "The structure and properties of 0.95MgTiO3–0.05CaTiO3 ceramics doped with Co2O3," Journal of Materials Science, vol. 49, pp. 5850-5855, Sept. 2014.
[29] Xuan Li, Xu Li, Liping Yang, Alex Q. Huang, Pengkun Liu, Xiaochuan Deng, and Bo Zhang, "Switching Loss Model of SiC MOSFET Promoting High Frequency Applications," in IEEE 31th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, pp. 231-234, May 2019.
[30] Xuan Li, Xing Tong, Alex Q. Huang, Shi Qiu, Xu She, Xiaochuan Deng, and Bo Zhang, " Split Gate SiC Trench Power MOSFET with Ultra-Low Switching Loss," in International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington DC, USA, pp. 765-769, June 2018.
[31] Xuan Li, Wenchi Yang, Lijun Li, Xiaochuan Deng, and Bo Zhang, "Three-Section Adjusted Field Limited Rings Applicable for SiC 2200V Power MOSFETs," in Electrochemical Society (ECS) Meeting, National Harbor, MD, USA, vol. 80, no. 1, pp. 181-187, Oct. 2017.
[32] Xuan Li, Liqi Zhang, Suxuan Guo, Yang Lei, Alex Q. Huang, and Bo Zhang, "Understanding Switching Losses in SiC MOSFET: Toward lossless switching," in 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Blacksburg, VA, USA, pp. 257-262, Nov. 2015.
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| 专业研究方向：
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| 专业名称 |
研究领域/方向 |
招生类别 |
| 140100集成电路科学与工程 |
01微电子器件与集成电路 |
博士学术学位 |
| 085400电子信息 |
01微电子器件与集成电路，03微电子器件与集成电路（非全） |
博士专业学位 |
| 140100集成电路科学与工程 |
02功率半导体与集成技术，03集成电路设计与设计自动化，04封装与微系统集成 |
硕士学术学位 |
| 085403集成电路工程 |
02功率半导体与集成技术，03集成电路设计与设计自动化，04封装与微系统集成 |
硕士专业学位 |
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