电子科学与工程学院
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| 导师代码： |
20350
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| 导师姓名： |
李轩
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| 性 别： |
男 |
| 特 称： |
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| 职 称： |
副研究员
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| 学 位： |
工学博士学位
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| 属 性： |
专职 |
| 电子邮件： |
andrew_xuanli@foxmail.com ； xuanli@uestc.edu.cn
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| 学术经历：
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2013.09－2015.09 北卡罗莱纳州立大学，未来可再生能源分布与管理系统中心，联合培养博士
2017.10 德州大学奥斯汀分校，半导体功率电子中心
2011.09－2017.12 电子科技大学，微电子学与固体电子学专业，博士学位
2007.09－2011.07 电子科技大学，电子科学与技术(微电子技术)专业，学士学位
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| 个人简介：
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李轩，电子科技大学，副研究员/副教授。长期一线系统从事 第三代宽禁带碳化硅（SiC）基功率半导体器件与****、它们在新型电力电子系统中应用 的研究。
作为负责人主持国家自然科学基金青年和面上、四川省重大重点、业界知名企业横向等项目。
作为主研人员参与国家自然科学基金重点和面上项目(多项)、国家重点研发项目(多项)、****、四川省重点（国际）项目、重点实验室项目(多项)、业界知名企业项目(多项)等20余项，累计经费达千余万元。
1、IEEE会员；
2、担任电子器件领域国际权威期刊IEEE Transactions on Electron Device, IEEE Electron Device Letter；电力电子应用领域国际权威期刊IEEE Transactions on Industrial Electronics, IEEE Transactions on Power Electronics, IEEE Journal of Emerging and Selected Topics in Power Electronics等国际期刊的审稿人。
荣誉奖励
2018 IEEE Excellent Student Paper Award (Chengdu Section)
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| 科研项目：
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目前，以碳化硅功率半导体领域国家战略需求与国民经济战场为导向，面向电动汽车与充电桩、不间断能源供给、光伏逆变（碳化硅中低压量级），高速列车与城市轨道交通、工业牵引（碳化硅中高压量级），特高压直流输电（碳化硅超高压量级）以及其他特殊领域对SiC功率器件(即功率类芯片)的迫切需求，一方面从SiC/SiO2界面态等物理底层出发，多层面、多角度地开展SiC功率单双极型器件(设计、制备、模型、可靠性)，碳化硅相适应的封装、驱动、控制、保护，应用碳化硅功率器件的电力电子装置(高功率密度、高效率、高可靠性)的研究；另一方面针对新一代电力电子装置高质量发展的述求，目前重点围绕逆变、整流、高频功率放大等拓扑，对功率芯片及其封装、驱动、控制等方面进行定制化设计的研究。最终，以各类应用场景特点为牵引，以碳化硅功率芯片为核心，通过碳化硅功率体系中各组成部分的环环相扣、层层推进、互促互补，突破多级别（消费级、工业级、车规级、航天级）芯片及其系统应用背后的关键科学问题与核心工程技术。特别欢迎对以上研究方向有兴趣的研究者(集成电路科学与工程、微电子学与固体电子学、电气工程、材料科学与工程及其他相关交叉学科背景)一起合作开展相关科研工作。
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| 研究成果：
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近几年来，在电子器件领域的顶级期刊IEEE Electron Device Letter、IEEE Trans. on Electron Device和电力电子领域的顶级期刊IEEE Trans. on Industrial Electronics、IEEE Trans. on Power Electronics等发表期刊论文40余篇；在业界顶级/知名会议IEEE ISPSD、ICSCRM、IEEE APEC、IEEE WiPDA、ECS发表学术论文数篇，其中邀请论文2篇。
近几年部分代表作
[1] Changwang Wang, Xuan Li, Lingfeng Li, Xiaochuan Deng, Wentong Zhang, Liu Zheng, Yansheng Zou, Weining Qian, Zhaoji Li, Bo Zhang, "Performance Limit and Design Guideline of 4H-SiC Superjunction Devices Considering Anisotropy of Impact Ionization," in IEEE Electron Device Letters, 2022.
[2] Xiaochuan Deng, Wei Huang, Xu Li, Xuan Li, Chao Chen, Yi Wen, Jiawei Ding, Wanjun Chen, Yongkui Sun, Bo Zhang, "Investigation of Failure Mechanisms of 1200 V Rated Trench SiC MOSFETs Under Repetitive Avalanche Stress," in IEEE Transactions on Power Electronics, vol. 37, no. 9, pp. 10562-10571, Sept. 2022.
[3] Junjie Ye, Xuan Li, Yangyang Wu, Xiaochuan Deng, Zhiqiang Li . Bo Zhang, "Failure Analysis of 200V p-GaN HEMT under Unclamped Inductive Switching Conditions," 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), pp. 350-353, Aug. 2021.
[4] Xu Li, Xiaochuan Deng, Xuan Li, Xiaojie Xu, Yi Wen, Hao Wu, Wanjun Chen, Bo Zhang, "A Novel SiC MOSFET With Embedded Auto-Adjust JFET With Improved Short Circuit Performance," in IEEE Electron Device Letters, vol. 42, no. 12, pp. 1751-1754, Dec. 2021.
[5] Ximing Chen, Xuan Li, Bangbing Shi, Junmiao Xiang, Yuanzhuo Dai, Chenzhan Li, Xiaochuan Deng, Haihui Luo, Yudong Wu, Bo Zhang, "Deep Understanding of Negative Gate Voltage Restriction for SiC mosfet Under Wide Temperature Range," in IEEE Transactions on Power Electronics, vol. 36, no. 8, pp. 8622-8627, Aug. 2021.
[6] Ximing Chen, Bangbing Shi, Xuan Li, Huaiyun Fan, Chenzhan Li, Xiaochuan Deng, Haihui Luo, Yudong Wu, and Bo Zhang, "Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs," 2021 Chin. Phys. B 30 048504.
[7] Xiaochuan Deng, Xu Li, Xuan Li, Hao Zhu, Xiaojie Xu, Yi Wen, Yongkui Sun, Wanjun Chen, Zhiqiang Li, Bo Zhang, "Short-Circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs," in IEEE Transactions on Power Electronics, vol. 36, no. 7, pp. 8300-8307, July 2021.
[8] Xiaochuan Deng, Xiaojie Xu, Xuan Li, Xu Li, Yi Wen and Wanjun Chen, "A Novel SiC MOSFET Embedding Low Barrier Diode With Enhanced Third Quadrant and Switching Performance," in IEEE Electron Device Letters, vol. 41, no. 10, pp. 1472-1475, Oct. 2020.
[9] Ximing Chen, Xuan Li, Yafei Wang, Hong Chen, Caineng Zhou, Chao Zhang, Chengzhan Li, Xiaochuan Deng, Yudong Wu and Bo Zhang, "Different JFET Designs on Conduction and Short-Circuit Capability for 3.3 kV Planar-Gate Silicon Carbide MOSFETs," in IEEE Journal of the Electron Devices Society, vol. 8, pp. 841-845, 2020.
[10] Xuan Li, Xing Tong, Rui Hu, Yi Wen, Hao Zhu, Xiaochuan Deng, Yongkui Sun, Wanjun Chen, Song Bai, Bo Zhang, "Failure Mechanism of Avalanche Condition for 1200V Double Trench SiC MOSFET," in IEEE Journal of Emerging and Selected Topics in Power Electronics. pp1-1. 2020.
[11] Xiaochuan Deng, Hao Zhu, Xuan Li, Xing Tong, Shufeng Gao, Yi Wen, Song Bai, Wanjun Chen, Kun Zhou, Bo Zhang, "Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions," in IEEE Transactions on Power Electronics, vol. 35, no. 8, pp. 8524-8531, Aug. 2020.
[12] Xuan Li, Xu Li, Pengkun Liu, Suxuan Guo, Liqi Zhang, Alex Q. Huang, Xiaochuan Deng, Bo Zhang, "Achieving Zero Switching Loss in Silicon Carbide MOSFET," in IEEE Transactions on Power Electronics, vol. 34, no. 12, pp. 12193-12199, Dec. 2019.
[13] Xuan Li, Ben Tan, Alex Q. Huang, Bo Zhang, Yumeng Zhang, Xiaochuan Deng, Zhaoji Li, Xu She, IEEE, Fangzhou Wang, and Xing Huang, "Impact of Termination Region on Switching Loss for SiC MOSFET," in IEEE Transactions on Electron Devices, vol. 66, no. 2, pp. 1026-1031, Feb. 2019.
[14] Xuan Li, Xing Tong, Alex Q. Huang, Hong Tao, Kun Zhou, Yifan Jiang, Junning Jiang, Xiaochuan Deng, Xu She, Bo Zhang, Yourun Zhang, Qi Tian, "SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode, " in IEEE Transactions on Electron Devices, vol. 65, no. 1, pp. 347-351, Jan. 2018.
[15] Xuan Li, Junning Jiang, Alex Q. Huang, Suxuan Guo, Xiaochuan Deng, Bo Zhang, Xu She, "A SiC Power MOSFET Loss Model Suitable for High-Frequency Applications, "in IEEE Transactions on Industrial Electronics, vol. 64, no. 10, pp. 8268-8276, Oct. 2017.
[16] Hao Li, Bin Tang, Xuan Li, Zhenjun Qing, Yingxiang Li, Han Yang, Qiang Wang, Shuren Zhang, "The structure and properties of 0.95MgTiO3–0.05CaTiO3ceramics doped with Co2O3." Journal of Materials Science, September 2014, Volume 49, Pages 5850-5855.
[17] Xuan Li, Xu Li, Liping Yang, Alex Q. Huang, Pengkun Liu, Xiaochuan Deng, Bo Zhang, " Switching Loss Model of SiC MOSFET Promoting High Frequency Applications," 2019 IEEE 31th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, pp. 231-234, 2019.
[18] Xuan Li, Xing Tong, Alex Q. Huang, Shi Qiu, Xu She, Xiaochuan Deng, Bo Zhang, " Split Gate SiC Trench Power MOSFET with Ultra-Low Switching Loss, "in International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington DC, pp. 765-769, June 2018.
[19] Xuan Li, Wenchi Yang, Lijun Li, Xiaochuan Deng, Bo Zhang, "Three-Section Adjusted Field Limited Rings Applicable for SiC 2200V Power MOSFETs, "in Electrochemical Society (ECS) Meeting, National Harbor, MD, vol. 80, no. 1, pp. 181-187, October 2017.
[20] Xuan Li, Liqi Zhang, Suxuan Guo, Yang Lei, Alex Q. Huang, Bo Zhang, "Understanding switching losses in SiC MOSFET: Toward lossless switching, " in 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Blacksburg, VA, pp. 257-262, November 2015.
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