电子科学与工程学院


 
导师代码: 20350
导师姓名: 李轩
性    别:
特    称:
职    称: 副研究员
学    位: 工学博士学位
属    性: 专职
电子邮件: andrew_xuanli @ foxmail.com ; xuanli@uestc.edu.cn

学术经历:   2013.09-2015.09 北卡罗莱纳州立大学,电气与计算机工程专业专业,联合培养博士 2017.10 德州大学奥斯汀分校,交流访问 2011.09-2017.12 电子科技大学,微电子学与固体电子学专业,博士学位 2007.09-2011.07 电子科技大学,电子科学与技术(微电子技术)专业,学士学位

个人简介:   李轩,电子科技大学,副研究员/副教授。长期一线系统从事第三代宽禁带碳化硅(SiC)半导体功率器件与集成和它们在电力电子系统中应用的研究。作为负责人或主研人员多次参与了国家自然科学基金重点/面上/青年项目(多项)、国家重点研发项目(多项)、国家科技重大专项、重点实验室项目(多项)、企业项目(多项)等20余项,累计经费达千余万元。 1、IEEE会员; 2、担任电子器件领域国际权威期刊IEEE Transactions on Electron Device, IEEE Electron Device Letter;电力电子应用领域国际权威期刊IEEE Transactions on Industrial Electronics, IEEE Transactions on Power Electronics, IEEE Journal of Emerging and Selected Topics in Power Electronics等国际期刊的审稿人。 荣誉奖励 2018 IEEE Excellent Student Paper Award (Chengdu Section)

科研项目:   目前,以碳化硅半导体国家需求与市场经济为导向,面向电动汽车与充电桩、对工业互联网的不间断能源供给(碳化硅中低压量级),城际高铁和城际轨道交通、工业牵引(碳化硅中高压量级),特高压直流输电(碳化硅超高压量级)以及其他特殊领域对SiC功率器件(即功率类芯片)的迫切需求,围绕如何最优使用高可靠性、高性能碳化硅功率器件以实现高可靠性、高性能电力电子装置过程中遇到的关键瓶颈问题,一方面从SiC/SiO2界面态等物理底层出发,多层面、多角度地开展SiC功率单双极型器件(设计、制备、模型、可靠性),碳化硅相适应的封装、驱动、控制,应用碳化硅功率器件的电力电子装置(高功率密度、高效率、高可靠性、高容量)的研究;另一方面适应电力电子装置高质量发展的述求,对功率芯片及其封装、驱动、控制等方面进行定制化发展。最终,以应用场景特点为牵引,以碳化硅功率芯片为核心,自下而上,自上而下,碳化硅功率体系各组成部分环环相扣、层层推进、互促互补,突破多级别(消费级、工业级、车规级、航天级)芯片及其相匹配应用背后的关键基础科学问题与关键工程技术。特别欢迎对以上研究方向有兴趣的研究者(微电子学与固体电子学,电气工程,材料科学与工程及其他相关交叉学科背景)一起合作开展相关科研工作。

研究成果:   近几年来,在该领域一直保持较高的活力,已发表学术文章40篇。以第一作者/通讯作者在电子器件领域的顶级期刊IEEE Electron Device Letter、IEEE Trans. on Electron Device和电力电子领域的顶级期刊IEEE Trans. on Industrial Electronics、IEEE Trans. on Power Electronics等发表期刊论文10篇;在业界顶级/知名会议IEEE ISPSD、ICSCRM、IEEE APEC、IEEE WiPDA、ECS发表学术论文数篇,其中邀请论文2篇。 近几年部分代表作 [1]Ximing Chen, Xuan Li, Bangbing Shi, Junmiao Xiang, Yuanzhuo Dai, Chenzhan Li, Xiaochuan Deng, Haihui Luo, Yudong Wu, Bo Zhang, "Deep Understanding of Negative Gate Voltage Restriction for SiC mosfet Under Wide Temperature Range," in IEEE Transactions on Power Electronics, vol. 36, no. 8, pp. 8622-8627, Aug. 2021. [2]Ximing Chen, Bangbing Shi, Xuan Li, Huaiyun Fan, Chenzhan Li, Xiaochuan Deng, Haihui Luo, Yudong Wu, and Bo Zhang, "Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs," 2021 Chin. Phys. B 30 048504. [3]Xiaochuan Deng, Xu Li, Xuan Li, Hao Zhu, Xiaojie Xu, Yi Wen, Yongkui Sun, Wanjun Chen, Zhiqiang Li, Bo Zhang, "Short-Circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs," in IEEE Transactions on Power Electronics, vol. 36, no. 7, pp. 8300-8307, July 2021. [4]Xiaochuan Deng, Xiaojie Xu, Xuan Li, Xu Li, Yi Wen and Wanjun Chen, "A Novel SiC MOSFET Embedding Low Barrier Diode With Enhanced Third Quadrant and Switching Performance," in IEEE Electron Device Letters, vol. 41, no. 10, pp. 1472-1475, Oct. 2020. [5]Ximing Chen, Xuan Li, Yafei Wang, Hong Chen, Caineng Zhou, Chao Zhang, Chengzhan Li, Xiaochuan Deng, Yudong Wu and Bo Zhang, "Different JFET Designs on Conduction and Short-Circuit Capability for 3.3 kV Planar-Gate Silicon Carbide MOSFETs," in IEEE Journal of the Electron Devices Society, vol. 8, pp. 841-845, 2020. [6]Xuan Li, Xing Tong, Rui Hu, Yi Wen, Hao Zhu, Xiaochuan Deng, Yongkui Sun, Wanjun Chen, Song Bai, Bo Zhang, "Failure Mechanism of Avalanche Condition for 1200V Double Trench SiC MOSFET," in IEEE Journal of Emerging and Selected Topics in Power Electronics. pp1-1. 2020. [7]Xiaochuan Deng, Hao Zhu, Xuan Li, Xing Tong, Shufeng Gao, Yi Wen, Song Bai, Wanjun Chen, Kun Zhou, Bo Zhang, "Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions," in IEEE Transactions on Power Electronics, vol. 35, no. 8, pp. 8524-8531, Aug. 2020. [8]Xuan Li, Xu Li, Pengkun Liu, Suxuan Guo, Liqi Zhang, Alex Q. Huang, Xiaochuan Deng, Bo Zhang, "Achieving Zero Switching Loss in Silicon Carbide MOSFET," in IEEE Transactions on Power Electronics, vol. 34, no. 12, pp. 12193-12199, Dec. 2019. [9]Xuan Li, Ben Tan, Alex Q. Huang, Bo Zhang, Yumeng Zhang, Xiaochuan Deng, Zhaoji Li, Xu She, IEEE, Fangzhou Wang, and Xing Huang, "Impact of Termination Region on Switching Loss for SiC MOSFET," in IEEE Transactions on Electron Devices, vol. 66, no. 2, pp. 1026-1031, Feb. 2019. [10]Xuan Li, Xing Tong, Alex Q. Huang, Hong Tao, Kun Zhou, Yifan Jiang, Junning Jiang, Xiaochuan Deng, Xu She, Bo Zhang, Yourun Zhang, Qi Tian, "SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode, " in IEEE Transactions on Electron Devices, vol. 65, no. 1, pp. 347-351, Jan. 2018. [11]Xuan Li, Junning Jiang, Alex Q. Huang, Suxuan Guo, Xiaochuan Deng, Bo Zhang, Xu She, "A SiC Power MOSFET Loss Model Suitable for High-Frequency Applications, "in IEEE Transactions on Industrial Electronics, vol. 64, no. 10, pp. 8268-8276, Oct. 2017. [12]Hao Li, Bin Tang, Xuan Li, Zhenjun Qing, Yingxiang Li, Han Yang, Qiang Wang, Shuren Zhang, "The structure and properties of 0.95MgTiO3–0.05CaTiO3ceramics doped with Co2O3." Journal of Materials Science, September 2014, Volume 49, Pages 5850-5855. [13]Xuan Li, Xu Li, Liping Yang, Alex Q. Huang, Pengkun Liu, Xiaochuan Deng, Bo Zhang, " Switching Loss Model of SiC MOSFET Promoting High Frequency Applications," 2019 IEEE 31th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, pp. 231-234, 2019. [14]Xuan Li, Xing Tong, Alex Q. Huang, Shi Qiu, Xu She, Xiaochuan Deng, Bo Zhang, " Split Gate SiC Trench Power MOSFET with Ultra-Low Switching Loss, "in International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington DC, pp. 765-769, June 2018. [15]Xuan Li, Wenchi Yang, Lijun Li, Xiaochuan Deng, Bo Zhang, "Three-Section Adjusted Field Limited Rings Applicable for SiC 2200V Power MOSFETs, "in Electrochemical Society (ECS) Meeting, National Harbor, MD, vol. 80, no. 1, pp. 181-187, October 2017. [16]Xuan Li, Liqi Zhang, Suxuan Guo, Yang Lei, Alex Q. Huang, Bo Zhang, "Understanding switching losses in SiC MOSFET: Toward lossless switching, " in 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Blacksburg, VA, pp. 257-262, November 2015.

专业研究方向:  
专业名称 研究方向 招生类别
080900电子科学与技术 03微电子学与固体电子学 硕士
085400电子信息 05集成电路工程 硕士


学院列表
01  信息与通信工程学院
02  电子科学与工程学院
03  材料与能源学院
04  机械与电气工程学院
05  光电科学与工程学院
06  自动化工程学院
07  资源与环境学院
08  计算机科学与工程学院
09  信息与软件工程学院
10  航空航天学院
11  数学科学学院
12  物理学院
13  医学院
14  生命科学与技术学院
15  经济与管理学院
16  公共管理学院
17  外国语学院
18  马克思主义学院
21  基础与前沿研究院
22  通信抗干扰技术国家级重点实验室
23  电子科学技术研究院
28  深圳高等研究院