电子科学与工程学院
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| 导师代码： |
10188
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| 导师姓名： |
张继华
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| 性 别： |
男 |
| 特 称： |
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| 职 称： |
教授
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| 学 位： |
工学博士学位
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| 属 性： |
专职 |
| 电子邮件： |
jhzhang@uestc.edu.cn
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| 学术经历：
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1998年7月毕业于兰州大学物理系。
2001年毕业于航天五院510所获硕士学位，参与“九五”****预研项目，从事金刚石薄膜和红外光学器件研究。
2004年毕业于中科院上海微系统与信息技术研究所获博士学位(师从半导体材料专家王曦院士)，参与973子项目、国家自然科学基金及上海市纳米专项项目，从事碳纳米管场发射器件研究。
2004年8月加入电子科技大学电子薄膜与集成器件国家重点实验室，现为微电子与固体电子学院教授，院长助理（协管科研）。
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| 个人简介：
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长期致力于薄膜集成研究与技术开发。
在铁电/半导体异质集成理论上取得突破，建立起考虑极化、应变影响的铁电/GaN调制耦合模型，成功预测了该集成结构中的极化调制、应变耦合和介电增强等新效应，率先提出基于铁电极化的新型功率器件和GaN增强型器件并获得实验验证，成为973项目的重要创新点。作为标志性成果之一获得总装专家顾问委员会的高度评价与肯定。论文J. Appl. Phys. 2010, 108: 084501被审稿人认为“...These theoretical predictions can provide some references to the design of new electronic devices. …( 理论预测为设计新型电子器件提供了参考)” ；论文Appl. Phys. Lett. 2009, 95:122101被审稿人认为“… a possible device structure was proposed. The authors’ findings are noteworthy…(提出一种新的器件结构，作者的发现值得关注)”。
发明了薄膜电路基片、复合电极制备与图形化等方法， 解决了薄膜化无源元件工艺兼容性、一致性问题，在薄膜集成器件产业化关键技术上取得突破，使TaN薄膜电阻、温度传感器、低成本薄膜电路基片等在国内率先实现工业规模生产，打破了美日台对薄膜器件的垄断。使企业由单一的陶瓷元件生产商成长为涵盖薄膜电阻、薄膜电容以及薄膜集成电路的高端元器件供应商。截至2012年3月已经在薄膜器件方面新增产值2886.5万元。
优化了非线性铁电薄膜微波介电性能和电光性能，在国内率先实现铁电薄膜移相器360?连续移相。稳步推进铁电薄膜在可调微波器件、光相控阵方面的应用研究。制备的铁电电光薄膜（双折射率0.085，透过率高于80%）是目前国际上最好的结果；“铁电薄膜材料及介质移相器关键技术”成果经鉴定“达到国际先进水平”。相关材料在军用电子器件中得到应用。
近五年作为项目负责人主持科研项目9项(包括国家自然科学基金2项，973二级子项目1项，产学研重大专项1项)，总经费933万元。 具有全程参与组织实施重大项目的经验：作为核心成员之一，参与谋划并撰写“军用核心电子材料与器件协同创新中”(2011计划)的实施方案，并成为该中心重要的建设骨干。作为2 项973 重大项目骨干和子课题负责人，承担项目的论证、研究和项目申请验收、鉴定工作。
承担本科生课程《信息论导论》、《统计物理》以及研究生课程《固体理论》的教学。以第一作者发表SCI论文10多篇，会议邀请报告4次。论文总引用次数520次，近五年他引340次。其中，2011年7月，Carbon 44(3): 418-422论文(影响因子5.868)被Elsevier评为“2006-2010中国大陆引用最多的50篇论文”之一。获授权发明专利4项。
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| 科研项目：
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近五年从事科研项目10余项，其中主持省部级以上项目 7 项：
(1)973二级子项目： 介电半导体调制耦合机理研究， 2007.01-2010.12， 主持， 250万元
(2)国家自然科学基金： 压电/GaN异质结构的电场-迁移率耦合效应研究， 2012.01-2015.12， 主持， 60万元
(3)国家自然科学基金： 薄膜型光相控阵器件基础研究， 2007.01-2009.12， 主持， 30万元
(4)预研： XXXX薄膜材料应用研究， 2011.01-2015.12， 主持， 200万元
(5)省部产学研结合重大专项： 薄膜集成器件关键技术开发， 2007.09-2015.08， 主持， 220万元
(6)预研基金： 兼容MMIC工艺的XXXX， 2012.06-2014.06， 主持， 30万元
(7)预研： XXXXXX材料应用研究， 2006.01-2010.12， 主持， 100万元
(8)国家重点实验室创新基金： 压电/半导体的应变耦合效应研究， 2009.01-2011.12， 主持， 30万元
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| 研究成果：
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一、SCI期刊文章
1. Jihua Zhang, Huizhong Zeng, Min Zhang, Wei Liu, Zuofan Zhou, Hongwei Chen, Chuanren Yang, Wanli Zhang, Yanrong Li, Probe Pressure dependence of Nanoscale Capacitance -Voltage Characteristic for AlGaN/GaN Heterostuctures, Rev. Sci. Instrum. 2010, 81(10): 103704.
2. Jihua Zhang, Chuanren Yang, Song Wu, Ying Liu, Hongwei Chen, Wanli Zhang, Yanrong Li, Theoretical design of GaN/ferroelectric heterostructure: Toward a strained semiconductor on ferroelectric, Appl. Phys. Lett. 2009, 95: 122101.
3. Jihua Zhang, Chuanren Yang, Song Wu, Ying Liu, Ming Zhang, Hongwei Chen, Wanli Zhang, and Yanrong Li, Tuning Two-dimensional Electron Gas of Ferroelectric/GaN Heterostructures by Ferroelectric Polarization, Semicond. Sci. Technol. 25 (2010) 035011.
4. Jihua Zhang, Chuanren Yang, Ying Liu, Min Zhang, Hongwei Chen, Wanli Zhang, and Yanrong Li, Can we enhance two-dimensional electron gas from ferroelectric/GaN heterostructures? J. Appl. Phys. 2010, 108(7): 084501.
5. Jihua Zhang, Shanxue Zhen, Lijun Yang, Feizhi Lou, Hongwei Chen, and Chuanren Yang, Super Smooth Modification of Al2O3 Ceramic Substrate by High Temperature Glaze of CaO–Al2O3–SiO2 System, Jpn. J. Appl. Phys. 2011: 50: 015803.
6. Jihua Zhang, Shangjun Mo, Huayi Wang, Shanxue Zhen, Hongwei Chen, Chuanren Yang, Microstructure and electrical properties of PLZT ceramics from Pb3O4 as the lead source, J. Alloy. Compd. 509 (2011) 2838–2841.
7. Jihua Zhang, Hongwei Chen, Guanhuan Lei, Wei He, Yu Liao, Qiaozhen Zhang, and Chuanren Yang, Improved Ferroelectric Phase Shifter by Inserting Spiral Inductors into Ground, Integrated Ferroelectrics 130:27–32, 2011
8. Jihua Zhang, Xi Wang, Wenwei Yang, Weidong Yu, Tao Feng, Qiong Li, Xianghuai Liu, Chuanren Yang. Interaction between carbon nanotubes and substrate and its implication on field emission mechanism. Carbon 44(3): 418-422(2006)
9. Jihua Zhang, Chuanren Yang, Yongjin Wang, Tao Feng, Weidong Yu, Jun Jiang, Xi Wang and Xianghuai Liu. Improvement of Field Emission of Carbon Nanotubes by Hafnium Coating and Annealing. Nanotechnology 17: 257-260 (2006).
10. Zhang J H, Yang W W, Wang X, Yu W D, Feng T, Liu X H, Yang C R. Appearance of a knee on the Fowler-Nordheim plot of carbon nanotubes on a substrate. Solid State Communications 138(1): 13-16 (2006).
11. Jihua Zhang, Tao Feng, Weidong Yu, Xianghuai Liu, Xi Wang. Enhancement of field emission from hydrogen plasma processed carbon nanotubes， Diamond and related materials. 14 (1), 54-59 (2004)
12. Jihua Zhang, Xi Wang, Weidong Yu, Tao Feng, Fumin Zhang, Zhihong Zheng, Qiong Li, Xianghuai Liu，Effect of Ion Impinging on the Microstructure and Field Emission of Carbon Nanotubes， Solid state communications, 127, (2003), 289-293.
13. TIAN Ben-Lang, CHEN Chao, ZHANG Ji-Hua, ZHANG Wan-Li, LIU Xing-Zhao*, AlGaN/GaN MISHEMTs with Sodium-Beta-Alumina as the Gate Dielectrics, Chin. Phys. Lett. 30(2): 026101 (2013).
14. Zhao Qiang, Wen Qi-Ye, Dai Yu-Han, Zhang Ji-Hua, Chen Hong-Wei, Yang Chuan-Ren Zhang Wan-Li, Tunability THz metamaterials base on the dielectric nonlinear of barium strontium titanate, Acta Phys. Sin, 62: 044104 (2013).
15. Dai Yu-Han, Chen Xiao-Lang, Zhao Qiang, Zhang Ji-Hua, Chen Hong-Wei, Yang Chuan-Ren, Tunable split ring resonators in terahertz band, Acta Phys. Sin, 62, 064104 (2013)
16. Lei GH, Chen HW, Zheng SX, Lou FZ, Chen LL, Zeng L, Zhang JH, Zhao Q, Yang CR, Effects of RF magnetron sputtering power density on NTC characteristics of Mn-Co-Ni thin films, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 24(4): 1203-1207 (2013)
17. Chao Chen, Xingzhao Liu, Jihua Zhang, Benlang Tian, Hongchuan Jiang, Wanli Zhang, and Yanrong Li, Threshold voltage modulation mechanism of AlGaN/GaN metal-insulator semiconductor high-electron mobility transistors with fluorinated Al2O3 as gate dielectrics. Appl. Phys. Lett. 2012, 100: 133507.
18. Bin Zhu, Shuwen Jiang, Chengtao Yang, Ping Li, and Jihua Zhang*, Optimized Process of Mn2+-Doped Ba0.5Sr0.5TiO3 Thin Films on Platinum Coated Sapphire Substrates, Jpn J. Appl. Phys. 2012, 51: 035505
19. Chen, Hongwei; Yang, Chuanren; Zhang, Jihua; He, Wei; Liao, Yu; Zhang, Qiaozhen; Zheng, Shanxue; Lei, Guanhuan, High performance distributed CPW phase shifters with etched BST thin films on Phi 3 '' LaAlO3 substrates, SOLID STATE SCIENCES,14(1): 117-120 (2012).
20. Tian Benlang, Chen Chao, Zhang Jihua, Li Yanrong, Chen Yuanfu, Liu Xingzhao, Zhou Jianjun, Li Liang, Chen Chen, Structure and electrical characteristics of AlGaN/GaN MISHFET with Al2O3 thin film as both surface passivation and gate dielectric. Semicond. Sci. Technol. 2011, 26: 085023.
21. Chen, Hongwei; Yang, Chuanren; Zheng, Shanxue; Zhang, Jihua; Zhang, Qiaozhen; Lei, Guanhuan; Lou, Feizhi; Yang, Lijun, Microstructure and dielectric properties of (Ba0.6Sr0.4)TiO3 thin films grown on super smooth glazed-Al2O3 ceramics substrate, APPLIED SURFACE SCIENCE, 258(4): 1510-1513
22. Tang, Haijun; Yang, Chuanren; Zhang, Jihua; Tunable Coplanar Waveguide
Phase Shifter Using BaxSr1-xTiO3 Thin Films on LaAlO3 Substrates. JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES, 31(7): 852-857 (2010).
23. He, W.; Yang, C.; Chen, H.; Zhang, J, Effects of fringing capacitor on ferroelectric phase shifter, ELECTRONICS LETTERS, 46(6): 426-U68 (2010).
24. Chen, Hongwei; Yang, Chuanren; Zhang, Jihua; Two critical grain sizes of Ba0.6Sr0.4TiO3 thin films, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 2010, 21(3): 236-240
25. Hongwei Chen, Chuanren Yang, Bo Wang, Hong Ji, Jihua Zhang. Structural, dielectric, and insulating properties of barium strontium titanate thin films grown on various oriented LAO substrates. Journal of Applied Physics, 2009, 105: 034112. (SCI: 408BZ; EI: 20090911925674)
26. Hongwei Chen, Chuanren Yang, Jihua Zhang, Bo Wang, Hong Ji. Electrical behavior of BaZr0.1Ti0.9O3 and BaZr0.2Ti0.8O3 thin films. Applied Surface Science, 2009, 255(8): 4585~4589. (SCI: 397XH; EI: 20090411877475)
27. Hongwei Chen, Chuanren Yang, Jihua Zhang, Yafang Pei, Zhen Zhao. Microstructure and antiferroelectric~like behavior of PbxSr1~xTiO3 ceramics. Journal of Alloys and Compounds, 2009, 486(1-2): 615-620. (SCI: 520TU; EI: 20094312403286)
28. Hongwei Chen, Chuanren Yang, Bo Wang, Jihua Zhang, An Yu. Reliability of barium strontium titanate (BST) thin films. Integrated ferroelectrics, 2009, 115(1): 11~17. (SCI: 485SN)
29. Hongwei Chen, Chuanren Yang, Chunlin Fu, Jihua Zhang, Jiaxuan Liao, Liye Hu. Effects of interface on the dielectric properties of Ba0.6Sr0.4TiO3 thin film capacitors. Applied Surface Science, 2008, 254(10): 3175~3179. (SCI: 277VV; EI: 080911117232)
30. Hongwei Chen, Chuanren Yang, Chunlin Fu, Jun Shi, Jihua Zhang, Wenjian Leng. Microstructure and dielectric properties of BaZrxTi1~xO3 ceramics. Journal of Materials Science: Materials in Electronics, 2008, 19(4): 379~382. (SCI: 261AF; EI: 080811111380)
31. B Wang, Ch R Yang, H W Chen, J H Zhang, A Yu, R T Zhang, Effects of argon to oxygen ratio on Ba(Zr0.2Ti0.8)O3 thin films prepared by RF magnetron sputtering, Journal of Materials Science: Materials in Electronics, 2009, 20(7): 614-618
32. Zhang, R. T.; Yang, C. R.; Yu, A.; Wang, B; Tang, HJ; Chen, HW; Zhang, JH, Wet chemical etching method for BST thin films annealed at high temperature, APPLIED SURFACE SCIENCE, 254(21): 6697-6700 (2008)
33. Yu, A.; Yang, C.; Chen, H.; Zhang, J, Distributed ferroelectric phase shifter with slots periodically inserted into ground, ELECTRONICS LETTERS, 44(3): 207-U13 (2008)
34. Yu, An; Yang, Chuanren; Chen, Hongwei; Zhang, J, Modified principle of distributed ferroelectric phase shifter considering the influence of interconnecting lines, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 50(3): 748-751 (2008).
35. Yumei Xin, Jihua Zhang, Wenwei Yang, Yuyue Hui, Zhaorui Song, Zixin Lin, Dasheng Shen, Electron field emission from ion beam synthesized SiC layers by high temperature carbon implantation into silicon, Appl. Phys. Lett., 84(2004): 5461-5463.
36. Tao Feng, Jihua Zhang, Xi Wang, Xianghuai Liu, Shichang Zou, Surface Modification of Printed Carbon Nanotubes and its Application of Field Emission. Surface Review and Letters, 12 (5-6): 733-739 (2005)
37. Feng T, Zhang JH, Li Q, Wang X, Yu K, Zou SC. Effects of plasma treatment on microstructure and electron field emission properties of screen-printed carbon nanotube films. Physica E-Low-Dimensional Systems & Nanostructures 36 (1): 28-33 (2007)
38. Weidong Yu, Jihua Zhang, Xianghuai Liu and Wang Xi. Spinose Carbon nanotubes embedded in graphitization DLC film by low frequency rf. plasma-enhanced chemical vapor deposition, Diamond and Related Materials, 12(2003), 2203-2207
39. W. D Yu, J. H Zhang, X. Wang, X. M. Li , X. D. Gao, Characterization and field emission property of aligned porous carbon nanotubes film by hydrogen ion implantation, Applied Physics A – Materials Science & Processing, 81(1): 169-172 (2005)
40. Yongjin Wang, Jihua Zhang, Fumin Zhang, Feng Zhang and Shichang Zou. Field emission from hafnium oxynitride films prepared by ion beam-assisted deposition. Applied Surface Science, 242(3-4): 407-411(2005)
41. Jun Jiang, Jihua Zhang, Tao Feng, Bingyao Jiang, Yongjin Wang, Fumin Zhang, Lijuan Dai, Xi Wang, Xianghuai Liu and Shichang Zou, Improved emission stability of HfC-coated carbon nanotubes field emitters. Solid State Communications, 135(6), 390-393(2005)
42. J. Jiang, T. Feng, X.H. Cheng, L.J. Dai, G.B. Cao, J.H. Zhang, B.Y. Jiang, X. Wang, X.H. Liu and S.C. Zou. Growth and field emission of coiled carbon nanotubes by plasma-enhanced chemical vapor deposition. Materials Letters 60 (8): 1085-1088 (2006).
43. J. Jiang, T. Feng, J.H. Zhang, X.H. Cheng, G.B. Chao, B.Y. Jiang, Y.J. Wang, X. Wang, X.H. Liu and S.C. Zou. Field emission properties and synthesis of carbon nanotubes grown by rf plasma-enhanced chemical vapor deposition. Appl. Surf. Sci., 252 (8): 2938-2943 (2006).
44. W. J. Leng, C. R. Yang, J. H. Zhang, H. W. Chen, H. Ji, C. L. Fu, and J. X. Liao. Structural and optical properties of BaxSr1–xTiO3 thin films on indium tin oxide/quartz substrates prepared by radio-frequency magnetron sputtering. J. Appl. Phys. 99, 114904 (2006).
45. Leng, W.J.; Yang, C.R.; Ji, H.; Zhang, J.H.; Chen, H.W.; Tang, J.L. Structure-related optical properties of (Pb,La) (Zr,Ti)O3 thin films on indium tin oxidequartz substrates. Journal of Applied Physics 100(8): 083505 (2006)
46. Leng, W.J.; Yang, C.R.; Ji, H.; Zhang, J.H.; Tang, J.L.; Chen, H.W.; Gao, L.F. Electrical and optical properties of lanthanum-modified lead zirconate titanate thin films by radio-frequency magnetron sputtering. Journal of Applied Physics 100(10): 106102 (2006)
47. Leng, W.J.; Yang, C.R.; Ji, H.; Zhang, J.H.; Tang, J.L.; Chen, H.W. Large third-order optical nonlinearity in (Pb,La) (Zr,Ti) O3 ferroelectric thin film. Journal of Applied Physics 100(12): 126101 (2006)
48. Leng WJ, Yang CH, Zhang J, et al. Nonlinear optical properties of the lanthanum-modified lead zirconate titanate ferroelectric thin films using Z-scan technique. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 46 (1-3): L7-L9 (2007)
49. Leng, Wenjian; Yang, Chuanren; Ji, Hong; Zhang, Jihua; Tang, Jinlong; Chen, Hongwei; Gao, Lifeng. Linear and nonlinear optical properties of (Pb,La)(Zr,Ti)O3 ferroelectric thin films grown by radio-frequency magnetron sputtering. Journal of Physics D: Applied Physics 40(4): 1206-1210 (2007)
50. Leng, Wenjian;Yang, Chuanren; Ji, Hong; Zhang, Jihua; Tang, Jinlong; Chen, Hongwei. The ferroelectric and optical properties of (Pb0.92La0.08)(Zr0.65Ti0.35)O3 thin films deposited by radio-frequency magnetron sputtering. Journal of Materials Science: Materials in Electronics, 17(12): 1041-1045 (2006).
51. Leng WJ, Yang CR, Ji H, Zhang JH, Tang JL, Chen HW, Gao LF. Linear and nonlinear optical properties of RF sputtered (Pb,La)(Zr,Ti)O-3 ferroelectric thin films. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 18 (8): 887-892 (2007)
52. Liao, J.X., Yang, C.R., Zhang, J.H.; Chen, H.W.; Fu, C.L.; Leng, W.J. The interfacial characteristics of Ba0.6Sr0.4TiO3 films deposited by radio frequency magnetron sputtering. Key Engineering Materials 336-338I: 374-376 (2007)
53. J.X. Liao, C.R. Yang, J.H. Zhang, C.L. Fu, H.W. Chen and W.J. Leng. The interfacial structures of (Ba, Sr)TiO3 films deposited by radio frequency magnetron sputtering. Appl. Surf. Sci. 252 (20): 7407-7414(2006).
54. Y.Wang, Z. Lin, J. Zhang, X. Cheng, F. Zhang, Side-wall roughness in SOI rib waveguides fabricated by inductively coupled plasma reactive ion etching, Appl. Phys. B 79, 879–881 (2004)
55. Jingqi Li, Deyan He，Wantu Guo, Jihua Zhang, Yining Sun, Qingsong Lei, Xin Gao, Nanostalline diamond thin films as infrared optical protective coatings, Inter. J. Modern Physics B, 16, 1013-1017 (2002).
56. Jingqi Li, Jihua Zhang, Wantu Guo, Qingsong Lei, Yining Sun, Xin Gao, Deyan He, Optical brazing technique for bonding diamond films to zinc sulfide, Diamond and Related Materials 11 (2002) 753–756
*****************************************************************学术会议：
1. 张继华，赵 强，微波介质薄膜研究与应用【邀请报告】，TFC’11全国薄膜技术学术研讨会，2011.8.25-28，南昌
2. Jihua Zhang, Chuanren Yang, Dielectric nonlinearity of BST ferroelectric films【Oral】, The 3rd China-Japan Symposium on Ferroelectric Materials & Their Applications, 2011.11.13 -17, Xiangtan, China
3. 杨传仁，张继华*，娄非志，余为国，莫尚军，张琴，陈宏伟，薄膜无源集成技术及其应用，TFC’ 09全国薄膜技术学术研讨会[大会邀请报]，2009, 8: 11(09.8.15-17)，成都
4. 贺伟，杨传仁，陈宏伟，张继华，姬洪，王波，唐海军，廖宇. 介质移相器用铁电薄膜研究. TFC’ 09全国薄膜技术学术研讨会，2009, 8: 121(09.8.15-17)
5. Ying Liu, Chuanren Yang, Jihua Zhang*, Song Wu, Hongwei Chen, The Two Dimensional Electron Gas in BST/Al0.3Ga0.7N/GaN Double Heterostructure, Proceedings of 2009 IEEE International Conference on Applied Superconductivity and Electromagnetic Devices, Chengdu, China, September 25-27, 2009. pp.176
6. Jihua Zhang, Ying Liu, Chuanren Yang, Song Wu, Hongwei Chen, Two-dimensional Electron Gas Characteristics of Ferroelectric/GaN Heterostructure, The Fourth International Conference on Surface and Interface Science and Engineering，SISE 2009，2009.9.12-18
7. Jihua Zhang, Tuning 2DEG of Ferroelectric/ GaN Heterostructure by Polari- zation and Strain——A theoretic Study,第七届中国国际纳米科技（武汉）研讨会[邀请报告],武汉，2008.10.20
8. 张继华,铁电/氮化镓异质结构基本物理参数与性能模,第十一届全国固体薄膜学术会议（杭州）[大会邀请报告]，杭州，2008.10.26
*****************************************************************发明专利：
1. 杨传仁;张瑞婷;张继华;陈宏伟，用于刻蚀BST薄膜的腐蚀液及制备方法，ZL200810045321.8
2. 杨传仁;张瑞婷;张继华;陈宏伟，一种高温加热的真空蒸发镀膜装置，ZL200810044995.6
3. 杨传仁;杨莉军;陈宏伟;张继华，薄膜电路产品基片处理方法，ZL200810304256.6
4. 杨传仁;宋秀娟;张继华;陈宏伟，NTC薄膜热敏电阻及制备方，法200810044961.7
5. 杨传仁;张琴;张继华;陈宏伟，基于不锈钢基板的YBCO厚膜电阻浆料及其制备方法，ZL201010158934.X
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